Chemical mechanical polishing conditioner

ABSTRACT

The present invention relates to a chemical mechanical polishing conditioner which comprises: a substrate; a bonding layer, disposed on the substrate; and an abrasive layer, having a thin metal sheet and a first layer of abrasive particles, wherein the first layer of abrasive particles is disposed on the thin metal sheet, and the abrasive layer is coupled to the substrate with the bonding layer; wherein the first layer of abrasive particles comprises a plurality of abrasive particles, of which protruding tips has a planar leveling surface, so that the plurality of abrasive particles do not have one or more protruding tips of the plurality of abrasive particles having particular significant difference in protrusion distance, and the plurality of abrasive particles have a patterning arrangement. Therefore, the present invention can reduce damage ratio of polished workpieces by a planar leveling surface of the chemical mechanical polishing conditioner, so that the chemical mechanical polishing conditioner has more excellent polishing efficiency and working life.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefits of the Taiwan Patent ApplicationSerial no. 102206277, filed on Apr. 8, 2012, the subject matter of whichis incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a chemical mechanical polishingconditioner, more particularly, to a chemical mechanical polishingconditioner having a planar leveling surface.

2. Description of Related Art

Chemical mechanical polishing (CMP) process is a common polishingprocess for a variety of industries. Using the chemical mechanicalpolishing process can polish the surface of various kinds of materials,which comprises plane of integrated circuit, ceramic, silicon, glass,quartz or metal, or etc. In addition, with the rapid development ofintegrated circuit, the chemical mechanical polishing can achieve objectof a large leveling area, and thus is commonly one of semiconductorwafer planarization techniques in the semiconductor processor. Inparticular, a number of processing times of the chemical mechanicalpolishing will increase with reducing the size of transistors, forexample, in a 28 nm line-width process, the number of processing timesof the chemical mechanical polishing may be up to 30 times.

The semiconductor industry currently spends in excess of one billionU.S. dollars each year manufacturing silicon wafers that must exhibitvery flat and smooth surfaces. Known techniques to manufacture smoothand even-surfaced silicon wafers are plentiful. The most common of theseinvolves the process known as Chemical Mechanical Polishing (CMP) whichincludes the use of a polishing pad in combination with an abrasiveslurry. Of central importance in all CMP processes is the attainment ofhigh performance levels in aspects such as uniformity of polished wafer,smoothness of the IC circuitry, removal rate for productivity, longevityof consumables for CMP economics, etc.

In CMP processes of semiconductors, the CMP pad is used to contact withwafers (or other semiconductor device) and is determined to thesituation to be attached with slurry, so that the polishing pad removesimpurity and unsmooth structure of the wafer surface by chemicalreaction and physical mechanism; after the polishing pad is used for acertain time, the polished bits and small pieces producing during thepolishing process stagnates on the surface of the polishing pad, so asto decrease the polishing effect and efficiency. Therefore, aconditioner can be used to recondition the surface of the polishing pad,so that the surface of the polishing pad is again to be roughened and iskept the best polishing state. However, in the manufacturing process ofthe conditioner, abrasive particles and a bonding layer are mixed toform an abrasive layer arranged on a surface of the substrate, whereinthe abrasive layer is fixed and bonded on the surface of the substrateby brazing or sintering means; and in a hardening process of theabrasive layer, because of the difference of the thermal expansioncoefficient between the bonding layer and the substrate, the conditionerusually has a problem distorted with the substrate surface. Therefore,the planarization of the surface of the conditioner is damaged, so as toaffect polishing efficiency and working life.

In prior arts, Applicant proposed Taiwan patent application number No.TW 100133909, which comprise: a first monolayer of superabrasiveparticles disposed on and coupled to one side of a metal support layer;and a second monolayer of superabrasive particles disposed on andcoupled to the metal support layer on an opposite side from the firstmonolayer. The superabrasive particles of the second monolayer arepositioned to have substantially the same distribution as thesuperabrasive particles of the first monolayer. Therefore, in theabove-mention patent, by distributing the warpage forces equally orsubstantially equally on both sides of the metal support layer throughthe arrangement of the superabrasive particles, these forces effectivelycancel each other with respect to the degree of warping occurring in themetal support layer, thus also minimizing the relative height movementof the superabrasive particles relative to one another.

Furthermore, Applicant proposed Taiwan patent application number No. TW101118288, which comprise: a matrix layer; and a monolayer of aplurality of superabrasive particles embedded in the matrix layer,wherein each superabrasive particle in the monolayer protrudes from thematrix layer, and the difference in protrusion distance between thehighest protruding tip and the second highest protruding tip of themonolayer of superabrasive particles is less than or equal to about 20microns and the difference in protrusion distance between the highest 1%of the protruding tips of the monolayer of superabrasive particles arewithin about 80 microns or less. The CMP pad dressers of theabove-mentioned patent include a layer of superabrasive particles havingsubstantially leveled tips across the working surface of the finishedCMP pad dresser. The CMP pad dresser having such substantially leveledtip arrangements can have a low scratch rate because superabrasiveparticles are less likely to pull out of the matrix layer due to theirmore uniform protrusion distribution compared to traditional dressers.Additionally, the more uniform protrusion distributions of such adressers allows the conditioning of CMP pads in such a manner as tofacilitate good polishing rates while at the same time extending theeffective working life of the dresser. These benefits can be affectedby, for example, uniform asperity spacing and size distribution in theCMP pad.

In the above-mentioned patent of the CMP conditioner, the applicant usesthe distributed position of the abrasive particles, so as to eliminatethe distortion resulted in the manufacturing process of the CMPconditioner, or to further control protruding distances of theprotruding tips of abrasive particles. Therefore, the chemicalmechanical polishing conditioner forms a planar leveling surface andreduce damage ratio of polished workpieces, so that the chemicalmechanical polishing conditioner has more excellent polishing efficiencyand working life.

Therefore, it is necessary to develop a chemical mechanical polishingconditioner that has a planar leveling surface, which can improve thenormal mechanical polishing conditioner limited due to manufacturingmethods and avoid the inconsistency between protruding distances of theprotruding tips of abrasive particles so as to damage the surfaceflatness of the chemical mechanical polishing conditioner.

SUMMARY OF THE INVENTION

The primary objective of the present invention is to provide a chemicalmechanical polishing conditioner, which can provide a design of a planarleveling surface of the chemical mechanical polishing conditioner toreduce the damage ratio of polished workpieces, so that the chemicalmechanical polishing conditioner has more excellent polishing efficiencyand working life.

To achieve the above-mentioned objective, the present invention providesa chemical mechanical polishing conditioner, which comprises: asubstrate; a bonding layer, disposed on the substrate; and an abrasivelayer, having a thin metal sheet and a first layer of abrasiveparticles, wherein the first layer of abrasive particles is disposed onthe thin metal sheet, and the abrasive layer is coupled to the substratewith the bonding layer; wherein the first layer of abrasive particlescomprises a plurality of abrasive particles, of which protruding tipshave a planar leveling surface, so that the plurality of abrasiveparticles do not have one or more protruding tips, of which havingparticular significant difference in protrusion distance, and theplurality of abrasive particles have a patterning arrangement. Inparticular, the planer leveling surface can be configured of theprotruding tips of the discontinuous abrasive particles, for example,the protruding tips of the 1,000 highest abrasive particles, which arenot configured of the continued abrasive particles being all adjacent toeach other, therefore, it can eliminate damage and scuff of thepolishing pad by the protruding tips having particular significantheight (i.e., Killer Diamond). In the above-mentioned chemicalmechanical polishing conditioner of the present invention, which canfurther comprise a second layer of abrasive particles, wherein thesecond layer of abrasive particles is disposed under the thin metalsheet and is sandwiched between the thin metal sheet and the bondinglayer. Therefore, the present invention can provide to reduce damageratio of polished workpieces by a design of a planar leveling surface ofthe chemical mechanical polishing conditioner, so that the chemicalmechanical polishing conditioner has more excellent polishing efficiencyand working life. In addition, in the above-mentioned chemicalmechanical polishing conditioner of the present invention, theprotruding tips of the plurality of abrasive particles having the planarleveling surface are generally understood to indicate the protrudingtips of the plurality of abrasive particles having the same height fromthe surface of the chemical mechanical polishing conditioner, so thatthe planar leveling surface can be formed from the protruding tips ofthe plurality of abrasive particles.

The present invention generally provides CMP pad conditioners andassociated methods that can be utilized in conditioning (e.g.,smoothing, polishing, dressing) a CMP pad. Pad dressers of the presentinvention can be advantageously utilized, for example, in dressing CMPpads that are used in polishing, finishing or otherwise affectingsemiconductor materials. Specifically, the present disclosure concernsCMP pad dressers having abrasive particles with substantially leveledtips. Traditional CMP pad conditioner manufacturing methods, even manyof those describing techniques for leveling abrasive particle tips priorto fixation, generally contain significant variation in tip heightacross the surface of the conditioner. Often, the abrasive particles areaffixed to the CMP pad conditioner support (i.e., substrate) in a mannerthat disrupts any leveling that has occurred. On the other hand,fixation techniques that utilize high heat and/or pressure to fixabrasive particles on the surface of CMP pad conditioner, because of thedifference of the thermal expansion coefficient between the bondinglayer and the bottom of substrate, thus causing warping of theconditioner support as the conditioner cools. Thus, unless steps aretaken to avoid such warpage, abrasive particles are not maintained intheir leveled state following cooling of the conditioner. This can beparticularly problematic with brazing techniques.

Accordingly, minimizing the warpage of the metal support layer canmaintain a greater degree of leveling of abrasive particle tips in thefinished workpiece. When heat and/or pressure are used to make apolished workpieces, warpage of the metal support layer can cause greatvariations in tip height level, even for those particles that wereleveled prior to heating and/or applying pressure. By distributing thewarpage forces equally or substantially equally on both sides of themetal support layer through the arrangement of the abrasive particles,these forces effectively cancel each other with respect to the degree ofwarping occurring in the metal support layer, thus also minimizing therelative height movement of the abrasive particles relative to oneanother.

In the chemical mechanical polishing conditioner of the presentinvention, the plurality of abrasive particles of the first layer ofabrasive particles may have a monolayer arrangement, and the first layerof abrasive particles and the second layer of abrasive particles mayhave the same configuration and distribution of abrasive particles.Therefore, by distributing the warpage forces equally or substantiallyequally on both sides of the metal support layer through the arrangementof the abrasive particles, these forces effectively cancel each otherwith respect to the degree of warping occurring in the metal supportlayer, thus also minimizing the relative height movement of the abrasiveparticles relative to one another. In addition, in the above-mentionedchemical mechanical polishing conditioner of the present invention, theplurality of abrasive particles may be directly disposed on the thinmetal sheet by heating or pressuring means according to theabove-mention context. On the other hand, the plurality of abrasiveparticles may be coupled to the thin metal sheet with a bonding layer ofabrasive particles, so as to have better bonding strength between theplurality of abrasive particles and the thin metal sheet.

Due to the fact the chemical-mechanical planarization is directed toplanar polishing, the contact distribution between the high point of thewafer and the polishing pad lead to confirm the quality (ex. yield rate)and the efficiency (ex. production capacity) of the chemical-mechanicalplanarization. If the distribution of the high point of the asperitiesis uneven, the abrasion rate of the wafer in different part would bedifferent in speed and the wafer surface would be uneven. Furthermore,it is possible that some areas would be over-polished to result insubjecting the same layer to dishing or more layers to erosion; orresult in subjecting some places under-polished to produce residuals. Ifwithin wafer non-uniformity (WIWNU), the effect of thechemical-mechanical planarization would be not desired. Accordingly, thepresent invention improves the conditioner based on extensive data fromtesting and experiment, especially adjusts the height of the workingpolishing tips by controlling an arrangement of the abrasive particlesto achieve aforesaid height distribution of the highest tip, so as toavoid producing the killer diamond and enhance the ratio of theeffective working polishing tips on the polishing units. Wherein, theaforesaid killer diamond is generally understood to indicate abrasiveparticles (i.e., diamond particles) having higher tip heightcorresponding to tip height of the other abrasive particles on thesurface of the chemical mechanical polishing conditioner.

Accordingly, the present invention provides a chemical mechanicalpolishing conditioner, which is using the shape polishing tips butmaintaining the distribution of the tips height to avoid the existenceof the killer diamond so as to enhance the ratio of the workingpolishing tips on the polishing unit and increase the removal ratio onthe wafer and the durability of the conditioner. In the chemicalmechanical polishing conditioner of the present invention, theprotruding tips of the plurality of abrasive particle have a planarleveling surface, which performs the protruding tips of the plurality ofabrasive particles having the same height (or protruding distance) fromthe surface of the chemical mechanical polishing conditioner. Wherein,the crucial concept of the planar leveling surface of the abrasiveparticles is to avoid damage of the polished workpieces (i.e., PolishingPad) resulted by the killer diamond, in this case, because of the tipheight of the killer diamond being relatively higher than the tip heightof the other of abrasive particles, the killer diamond will penetrateand permeate over the polished workpiece and then result to damagescratch of the polished workpiece in the CMP manufacturing process.

In order to illustrate further the tip leveling of the abrasivesparticle, the present invention can define the protruding tips of theplurality of abrasive particles being a planar leveling surface by avariety of ways, which include: using FRT (Germany FRT (Fries Research &Technology GmbH)) to measure all of protruding tips of the abrasiveparticles on the substrate (i.e., backward substrate) of the chemicalmechanical polishing conditioner, for example, to measure the chemicalmechanical polishing conditioner manufactured by brazing means, whereinthe surface of the chemical mechanical polishing conditioner has over30,000 protruding tips of the abrasive particles. The total of height ofthe protruding tips of the chemical mechanical polishing conditioner,which protruding tips protrude the surface of the bonding layer, ismeasured. Using the least square method with the height data, ahypothetical plane may be calculated by those protruding tips top, andthe hypothetical plane is the aforesaid predetermined plane, which maybe defined the protruding distance of the predetermined plane being 0.The first highest tip is the heights of the protruding tip whichprotrude over the predestine plane the most in those protruding tips,the second highest tip is the heights of the protruding tip whichprotrude over the predestine plane the second most in those protrudingtips, and the other highest tip are the like.

However, by use of the normal chemical mechanical polishing conditioner,it is only measured about protruding tips of 300 abrasive particlesproducing wear and tear during the scaling value of 50 multiplying powerafter polishing. That is, the about 30% abrasive particles produce wearand tear in the polishing process, so that the present protrudingdistance of the protruding tip of these abrasive particles is lower thanthe initial protruding distance of the protruding tip of these abrasiveparticles, and thus the hypothetical plane extrapolated by all ofprotruding tips is not preformed effectiveness; therefore, according tothe practical experience of the applicant of the present invention, the1,000 highest protruding tips of all of abrasive particles are regardedas a planar leveling surface, so that protruding tips of about 1,200abrasive particles producing wear and tear in the composite chemicalmechanical polishing conditioner after polishing are measured during thescaling value of 50 multiplying power.

In another more logical measuring method of the planar leveling surface,that is to use the conditioner to apply about 3 kg of downward force, soas to implement scratch testing, wherein the maximum penetration depth(about 50 microns) is formed in the conditioner, which corresponds theprotruding tip of the conditioner regarded as killer diamond. However,the protruding distances of the abrasive particles or spacing betweenthe abrasive particles are very small, so that it is difficult to makeactual measurements.

In the other measuring method of the planar leveling surface, that is,an abrasive surface of the conditioner distributed abrasive particles isset in contact with a carbon paper arranged on a planar leveling surface(e.g., grantie surface), and then three highest protruding tips isremarked by carbon powder, and a planar leveling surface is defined bythe three points. However, the measuring method still has a problem.That is, when the three highest protruding tips by measurement are alllocated in the same side of the conditioner, the three points willconnect to form an incline surface, which is not actual the requiredplanar leveling surface.

On another case, if spacing between the killer diamond and otherabrasive particles is further far, the killer diamond will be easilyproduced damages. In addition, because the killer diamond lacking to goalong with the neighboring higher abrasive particles supports to be theabrasive surface, so that the polishing pad will be produced greaterthan usual scratches.

Furthermore, in the above-mentioned context, a variety of techniques arecontemplated to facilitate the protruding tips of the abrasive particlesto be defined as a planar leveling surface, and are considered to bewithin the present scope, but not limited to. In one aspect of thepresent invention, the above chemical mechanical polishing conditionercan use FRT to measure the protruding tips of all of the highestabrasive particles, and then can use least square method to extrapolatea hypothetical plane made of the protruding tips and be defined theheight deviation between the abrasive particles and the hypotheticalplane as the planar leveling surface of the protruding tips. Therefore,after the chemical mechanical polishing conditioner is used, thechemical mechanical polishing conditioner may have 300 or more abrasiveparticles producing wear and tear during the scaling value of 50multiplying power

The present CMP pad dressers include a layer of abrasive particleshaving substantially leveled tips across the working surface of thefinished CMP pad dresser. A variety of techniques can be utilized tomaintain tip leveling, and any such technique is considered to be withinthe present scope. In the chemical mechanical polishing conditioner ofthe present invention, the planar leveling surface may be made by ahypothetical plane as a level, so that the planar leveling surface maybe formed the protruding tips of the plurality of abrasive particlesrelative to the hypothetical plane; wherein the planar leveling surfacemay be configured of the protruding tips of the discontinuous abrasiveparticles extrapolated by FRT measurement, and not configured of thecontinued abrasive particles being all adjacent to each other; whereinthe number of the protruding tips of the plurality of abrasive particlesmay be from 1000 to 30,000 or more, and preferably, the number of theprotruding tips of the plurality of abrasive particles may be 1000. Inone aspect of the present invention, the hypothetical plane can measurethe protruding tips of all of abrasive particles (e.g., over 30,000protruding tips of the abrasive particles) on the conditioner by usingFRT, and then use least square method to extrapolate a hypotheticalplane made of the protruding tips of all of abrasive particles. Or, inanother aspect of the present invention, it may be to use FRT to measurethe protruding tips of the 1,000 highest abrasive particles, and thenuse least square method to extrapolate a hypothetical plane made of the1,000 highest protruding tips of all of abrasive particles, and bedefined the height deviation between the abrasive particles and thehypothetical plane as the planar leveling surface of the protrudingtips, wherein in the above-mentioned two extrapolated methods of thehypothetical plane is compared with the hypothetical plane extrapolatedby protruding tips of all of abrasive particles, the hypothetical planedefined by protruding tips of the 1,000 highest abrasive particles willmake the protruding tips to have the better function; In addition, theheight of protruding tips of the abrasive particles may be compared anddefined with the height of the hypothetical plane, wherein, the heightof protruding tips of the abrasive particles will be compared with theheight of the hypothetical plane and have the most difference distanceregarded as the highest protruding tip, compared with the height of thehypothetical plane and have the 2nd most difference distance regarded asthe 2nd highest protruding tip, compared with the height of thehypothetical plane and have the 10nd most difference distance regardedas the 10nd highest protruding tip, compared with the height of thehypothetical plane and have the 100nd most difference distance regardedas the 100nd highest protruding tip, compared with the height of thehypothetical plane and have the most difference 1% distance regarded asthe 1% highest protruding tip. Therefore, the difference in protrusiondistance between the highest protruding tip and the 2nd highestprotruding tip is the difference that the highest protruding tip and the2nd highest protruding tip is relative to the plane of the differencesin the hypothetical plane; the difference in protrusion distance betweenthe highest protruding tip and the 10nd highest protruding tip is thedifference that the highest protruding tip and the 10nd highestprotruding tip is relative to the plane of the differences in thehypothetical plane; the difference in protrusion distance between thehighest protruding tip and the 100nd highest protruding tip is thedifference that the highest protruding tip and the 100nd highestprotruding tip is relative to the plane of the differences in thehypothetical plane; the difference in protrusion distance between thehighest protruding tip and the highest 1% protruding tip is thedifference that the highest protruding tip and the highest 1% protrudingtip is relative to the plane of the differences in the hypotheticalplane; and the difference in protrusion distance between the otherprotruding tips can be all derivate by principle.

In the chemical mechanical polishing conditioner of the presentinvention, protruding tips of the plurality of abrasive particles may beregarded as a planar leveling surface according to the above-mentioncontext, wherein, in one aspect of the present invention, the differencein protrusion distance between the highest protruding tip and the 2^(nd)highest protruding tip of the first layer of abrasive particles may beless than or equal to about 20 microns. In another aspect of the presentinvention, the difference in protrusion distance between the highestprotruding tip and the 2^(nd) highest protruding tip of the first layerof abrasive particles may be less than or equal to about 10 microns.Furthermore, in one aspect of the present invention, the difference inprotrusion distance between the highest protruding tip and the 10^(th)highest protruding tip of the first layer of abrasive particles may beless than or equal to about 20 microns. In another aspect of the presentinvention, the difference in protrusion distance between the highestprotruding tip and the 100^(th) highest protruding tip of the firstlayer of abrasive particles may be less than or equal to about 40microns. Additionally, in another aspect of the present invention, thedifference in protrusion distance between the highest 1% of theprotruding tips of the first layer of abrasive particles may be lessthan or equal to about 80 microns.

It is noted that the above-mentioned context defining the planarleveling surface of the protruding tips can be referenced, which theprotruding distance may be the difference in protrusion distance betweenthe protruding tips and the hypothetical plane extrapolated by FRTmeasurement, and the recited protrusion distances can include adistribution across the entire monolayer surface or a discrete area ofthe monolayer. For example, the highest 1% of protruding tips can belocated around the periphery of the monolayer. In one embodiment,discrete regions of leveled abrasive particle tips can be located withina larger area of abrasive particles having a lower protrusion distancethan the leveled portion. It is also contemplated that the monolayer caninclude multiple regions of abrasive particles that are leveled asdescribed, within a larger area of abrasive particles having a lowerprotrusion distance.

In the chemical mechanical polishing conditioner of the presentinvention, various methods can be utilized to measure abrasive particletip height to determine the difference in protrusion distance betweentips. As such, any method for making such a determination is consideredto be within the present scope. It should be noted that for the purposesof the present disclosure, the term “protrusion” refers to the height ofa particle relative to some reference point. Techniques for suchmeasurements can include direct measurements of the tip heights relativeto a reference point such as, for example, the highest particle tip, asurface of a rigid support, the bottom surface of the matrix, etc.Measurements of particle height from the surface of the matrix materialcan be problematic, however, due to the irregular nature of suchmaterials due to wicking around the abrasive particles. In those caseswhereby the matrix material is uniform, such a surface may be used todetermine particle height. Additionally, a relative protrusion or heightdifference between two particles would be the difference in the heightsbetween these particles measured from a common reference point.Furthermore, in some cases the abrasive particles may lie along a slope,curvature, or some other arrangement that is not parallel to the metalsupport layer. In these cases, the protrusion height would be normalizedagainst the slope, curvature, or other arrangement that is not parallelto the metal support layer so that the relative protrusion heightdifference between particles can be measured in the absence of theslope, curvature, etc. It should be noted that the abrasive particle tipheight leveling can, in some cases, be independent from the positioningor patterning of the abrasive particles across the surface of theconditioner.

One example of a direct measurement technique can include an opticalscanning process to evaluate abrasive particle tip positions. In onesuch process, an optical scanner can scan the surface of the CMP padconditioner to determine the height of the abrasive particle tipsrelative to a fixed point. For example, the scanner can scan downward inspace toward the conditioner until the highest tip is located. Thehighest tip can then be set to the reference point, and the scanner cancontinue scanning in a direction toward the conditioner measuring thedistance from the reference point to each abrasive particle tip acrossthe surface of the conditioner. Accordingly, the difference inprotrusion distance between all of the abrasive particles across theconditioner can be directly measured. Furthermore, measurementtechniques can also include indirect measurements, such as, for example,applying the diamond monolayer to a deformable substrate that deformsrelative to the protrusion distance of the particle tips. The diamondmonolayer can be pressed into the deformable substrate and/or movedacross the deformable substrate to form a scratch pattern therein. Tipheight can thus be extrapolated from such indirect measurements.

In the chemical mechanical polishing conditioner of the presentinvention, arrangement or orientation of the abrasive particles may beany varied according to conditions or requirement of a polishingprocess, but no limited to. In the above-mentioned chemical mechanicalpolishing conditioner of the present invention, the patterningarrangement of the abrasive particles can be an array pattern, a annularring pattern, a concentric annular ring pattern, or a spiral ringpattern. On the other hand, the abrasive particles are oriented in aspecific attitude, and the abrasive particles is formed a tip-grindingsurface, a plane-grinding surface, a ridge-grinding surface or acombination thereof, but not limited to. In addition, theabove-mentioned tip-grinding surface is generally understood to indicatethat the protruding tips of the abrasive particles facing towards thepolished workpieces (e.g. polishing pad), so that the surface of thechemical mechanical polishing conditioner is the tip-grinding surfaceconsisted of the protruding tips of the abrasive particles; theabove-mentioned plane-grinding surface is generally understood toindicate that the protruding tips of the abrasive particles facingtowards the leveling parallel to the conditioner, so that the surface ofthe chemical mechanical polishing conditioner is the plane-grindingsurface consisted of the protruding plane of the abrasive particles; theabove-mentioned plane-grinding surface is generally understood toindicate that the protruding tips of the abrasive particles form aincline degree with the conditioner, so that the surface of the chemicalmechanical polishing conditioner is the ridge-grinding surface consistedof the protruding incline plane of the abrasive particles.

In the chemical mechanical polishing conditioner of the presentinvention, the abrasive particles can be arranged into a predeterminedpattern. Such a pattern can be a uniformly distributed pattern or anon-uniformly distributed pattern. Additionally, a variety of techniquesare contemplated to facilitate the arrangement of abrasive particlesinto a predetermined pattern, and are considered to be within thepresent scope. Predetermined is understood to mean a non-random patternthat has been determined prior to arranging the abrasive particles. Inone aspect of the present invention, a predetermined pattern can alsoapply to a predetermined spacing between particles. Non-limitingexamples of such techniques include arrangement by a template,arrangement using spots of adhesives, arrangement on a first substratefollowed by a pattern specific transfer from the first substrate to themetal support layer, and the like, including combinations thereof. Theabrasive particles from either of the monolayers can be temporarily heldin position in the predetermined pattern using a variety of techniques,including, without limitation, adhesives, dimpled locations on the metalsupport matrix, a supporting compound such as, for example, a wax, andthe like, including combinations thereof. In another aspect of thepresent invention, the abrasive particles can be temporarily coupled tothe metal support layer using an adhesive that then volatilizes away andis eliminated during construction of the conditioner.

In the chemical mechanical polishing conditioner of the presentinvention, a CMP pad conditioner having such substantially leveled tiparrangements can have a low scratch rate because abrasive particles ofthe present invention are less likely to pull out of the matrix layerdue to their more uniform protrusion distribution compared totraditional conditioners. Additionally, the more uniform protrusiondistributions of such a dressers allows the conditioning of CMP pads insuch a manner as to facilitate good polishing rates while at the sametime extending the effective working life of the conditioner. Thesebenefits can be affected by. Additionally, uniform asperity spacing andsize distribution in the CMP pad.

In the chemical mechanical polishing conditioner of the presentinvention, the plurality of abrasive particles may be consisted of allkind of configuration of abrasive particles; in one aspect of thepresent invention, the plurality of abrasive particles may be syntheticdiamond, natural diamond, Poly-crystalline diamond, CBN (cubic BoronNitride), PCBN (Poly-crystalline cubic Boron Nitride); in another aspectof the present invention, the plurality of abrasive particles may besynthetic diamond; and, in the other aspect of the present invention,the plurality of abrasive particles may be synthetic polycrystallinediamond, but not limited to. Additionally, in the chemical mechanicalpolishing conditioner of the present invention, a particle size may bedependent on the particle type, or crystal form of particles, or surfaceroughness that a polishing process requires; in one aspect of thepresent invention, the particle size of the plurality of abrasiveparticles may be from 100 microns to 600 microns; and, in another aspectof the present invention, the particle size of the plurality of abrasiveparticles may be from 500 microns, but not limited to. Furthermore, inthe chemical mechanical polishing conditioner of the present invention,the thin metal sheet may be selected any flexible and thin sheet so asto easily attach the abrasive layer with the substrate and fix theplurality of abrasive particles, or the thin metal sheet can be aflexible and thin sheet to fix the plurality of abrasive particles, andthe above-mentioned thin metal sheets are considered to be within thepresent scope, for example copper metal sheet, thin plastic sheet, orthin braze alloy sheet.

In the chemical mechanical polishing conditioner of the presentinvention, constituents of the bond layer or the bond layer of abrasiveparticles may be any varied according to conditions or requirement of apolishing process, wherein, the bonding layer or the bonding layer ofabrasive particles may be a solder layer, a plating layer, a sinterlayer, or a resin layer. In one aspect of the present invention, thebonding layer or the bonding layer of abrasive particles may be a solderlayer, wherein, the solder layer may be at least one selected from thegroup consisting of copper (Cu), ferrous (Fe), stannum (Sn), cobalt(Co), nickel (Ni), chromium (Cr), manganese (Mn), silicon (Si), aluminum(Al), titanium (Ti), boron (B), phosphorus (P), or combinations thereof.In another aspect of the present invention, the solder layer may benickel-based braze material or Ni—Co braze alloy material. Furthermore,in the other aspect of the present invention, the solder layer may beCu—Sn—Ti braze alloy material. In addition, in the chemical mechanicalpolishing conditioner of the present invention, the substrate may be astainless steel layer, but not limited to. Furthermore, in theabove-mentioned chemical mechanical polishing conditioner of the presentinvention, the above-mentioned chemical mechanical polishing conditionermay further comprise a protective layer disposed on the surface of theabrasive layer, wherein the protective layer may cover the first layerof abrasive particles and the thin metal sheet, or the protective layermay cover the first layer of abrasive particles and the abrasive layer,wherein, the protective layer may be a Ni-metal layer, a Pd-metal layer,a DLC layer, a layer of diamond thin film or likes, so that the chemicalmechanical polishing conditioner can provide with more excellentcorrosion resistance and work life by the protective layer

Consequently, the chemical mechanical polishing conditioner of thepresent invention can control the protruding distance of the protrudingtips of abrasive particles, so as to decrease to damage ratio ofpolished workpieces, and thus the chemical mechanical polishingconditioner has more excellent polishing efficiency and working life.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1D shows a process of manufacturing a conventional chemicalmechanical polishing conditioner;

FIGS. 2A-2D shows a process of manufacturing a chemical mechanicalpolishing conditioner according to the embodiment 1 of the presentinvention;

FIGS. 3A-3D shows a process of manufacturing a chemical mechanicalpolishing according to the embodiment 2 of the present invention;

FIGS. 4A-4B shows schematic views of a chemical mechanical polishingconditioner according to the embodiment 3 of the present invention;

FIGS. 5A-5B shows schematic views of a chemical mechanical polishingconditioner according to the embodiment 4 of the present invention;

FIG. 6 shows a schematic view of a chemical mechanical polishingconditioner according to the embodiment 5 of the present invention;

FIG. 7 shows a schematic view of a chemical mechanical polishingconditioner according to the embodiment 6 of the present invention; and

FIG. 8 shows a schematic view of a chemical mechanical polishingconditioner according to the embodiment 7 of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereafter, examples will be provided to illustrate the embodiments ofthe present invention. Other advantages and effects of the inventionwill become more apparent from the disclosure of the present invention.Other various aspects also may be practiced or applied in the invention,and various modifications and variations can be made without departingfrom the spirit of the invention based on various concepts andapplications.

Comparative Example 1

Please refer to FIGS. 1A-1D, which show a process of manufacturing aconventional chemical mechanical polishing conditioner. Firstly, asshown in FIGS. 1A-1B, a bonding layer 11 is formed on the workingsurface of a substrate 10, wherein the bonding layer 11 is made from theknown nickel-based braze material, and the substrate 10 is made fromstainless steel material. Next, as shown in FIG. 1C, abrasive particles12 are disposed on the bonding layer 11, wherein the distance and thearrangement between the abrasive particles 12 may be controlled by atemplate (not shown in FIG. 1C), and the abrasive particles 12 may bepressed down by using a rigid plate (not shown in FIG. 1C), so that theabrasive particles 12 is disposed on the bonding layer 11. Finally, asshown in FIG. 1D, the abrasive particles 12 are fixed on the substrate10 by the bonding layer 11 through a heat hardening process. However,because of the difference of the thermal expansion coefficient betweenthe bonding layer 11 (e.g., the thermal expansion coefficient of brazemetal is from about 14 ppm/° C. to about 15 ppm/° C.) and the substrate10 (e.g., the thermal expansion coefficient of braze metal is about 16ppm/° C.), the chemical mechanical polishing conditioner will bedistorted in the cooling process after hardening the chemical mechanicalpolishing conditioner, and thus the bonding layer 11 and the abrasiveparticles 12 of the surface of the substrate 10 will be distorted.Accordingly, as shown in FIG. 1D, the height of the bonding layer 11 andthe abrasive particles 12 in the central region of the chemicalmechanical polishing conditioner is higher than the height of thebonding layer 11 and the abrasive particles 12 in the outside annularregion of the chemical mechanical polishing conditioner, so as to form adistorted surface in which the height of the outside region is higherthan the height of the central region. Therefore, the flatness of thechemical mechanical polishing conditioner is damaged to increase damageratio of polished workpieces, and thus the polishing efficiency and theworking life of the chemical mechanical polishing conditioner become todecrease.

Embodiment 1

The primary objective of the present invention is to control theprotruding distance of the protruding tips of abrasive particles, so asto decrease to damage ratio of polished workpieces, and thus thechemical mechanical polishing conditioner has more excellent polishingefficiency and working life. FIGS. 2A-2D shows a process ofmanufacturing a chemical mechanical polishing conditioner according tothe embodiment 1 of the present invention. Please refer to FIG. 2A,firstly, an abrasive layer 22 is provided and has a first layer ofabrasive particles 221 a, a thin metal sheet 222, and a second layer ofabrasive particles 221 b. Wherein the first layer of abrasive particles221 a is located above the thin metal sheet 222, the second layer ofabrasive particles 222 b is located under the thin metal sheet 222, andthus the thin metal sheet 222 is sandwiched between the first layer ofabrasive particles 221 a and the second layer of abrasive particles 221b; the first layer of abrasive particles 221 a of the abrasive layer 22comprises a plurality of abrasive particles, of which the protrudingtips of the plurality of abrasive particles may be regarded as a planarleveling surface, and the plurality of abrasive particles have apatterning arrangement being an array pattern; and the protruding tipsof the plurality of abrasive particles are all oriented upward so as toform a tip-grinding surface having an orientation. Furthermore, theplurality of abrasive particles of the first layer 221 a of abrasiveparticles have a monolayer arrangement, and the first layer of abrasiveparticles 221 a and the second layer of abrasive particles 221 b havethe same configuration and distribution of abrasive particles. Inaddition, in the embodiment 1, the plurality of abrasive particles ofthe first layer of abrasive particles 221 a and the second layer ofabrasive particles 221 b are synthetic diamond having a particle size500 microns, and the thin metal sheet 222 is selected flexible and thinsheet so as to easily attach the abrasive layer with the substrate andfix the plurality of abrasive particle, for example copper metal sheet,thin plastic sheet, or thin braze alloy sheet.

Next, as shown in FIG. 2B, the plurality of abrasive particles of thefirst layer of abrasive particles 221 a and the second layer of abrasiveparticles 221 b are embedded and fixed in both sides of the thin metalsheet 222 by heating and pressuring means. Finally, as shown in FIGS.2C-2D, a substrate 20 made of stainless steel materials and a bondinglayer 21 made of Cu—Sn—Ti braze alloy materials are provided, whereinthe bonding layer 21 is located above the substrate 20, then theabrasive layer 22 is disposed on the bonding layer 21 and carried onwith heat-brazing, and thus the abrasive layer 22 can bond to and fixedon the substrate 20 by the bonding layer 21, so as to form the chemicalmechanical polishing conditioner having the planar leveling surface. Inaddition, the above chemical mechanical polishing conditioner furthercomprises a Ni-metal layer or a DLC layer as a protective layer (notshown) that can be disposed on the surface of the abrasive layer 22, sothat the chemical mechanical polishing conditioner can be provided withmore excellent corrosion resistance and work life by the protectivelayer.

Accordingly, the chemical mechanical polishing conditioner of theembodiment 1 of the present invention comprises: a substrate 20; abonding layer 21, disposed on the substrate 20; and an abrasive layer22, having a thin metal sheet 222 and a first layer of abrasiveparticles 221 a, wherein the first layer of abrasive particles 221 a isdisposed on the thin metal sheet 222, and the abrasive layer 22 iscoupled to the substrate 20 with the bonding layer 21; wherein the firstlayer of abrasive particles 221 a comprises a plurality of abrasiveparticles, of which protruding tips have a planar leveling surface, sothat the plurality of abrasive particles do not have one or moreprotruding tips of the plurality of abrasive particles having particularsignificant difference in protrusion distance, and the plurality ofabrasive particles have a patterning arrangement. In addition, thechemical mechanical polishing conditioner of the embodiment 1 furthercomprises a second layer of abrasive particles 221 b, wherein the secondlayer of abrasive particles 221 b is disposed under the thin metal sheet222 and is sandwiched between the thin metal sheet 222 and the bondinglayer 21. Furthermore, the plurality of abrasive particles of the firstlayer 221 a of abrasive particles have a monolayer arrangement, and thefirst layer of abrasive particles 221 a and the second layer of abrasiveparticles 221 b have the same configuration and distribution of abrasiveparticles.

In particular, the above chemical mechanical polishing conditioner canuse FRT to measure the protruding tips of the 1,000 highest abrasiveparticles, and then can use least square method to extrapolate ahypothetical plane made of the protruding tips and be defined the heightdeviation between the abrasive particles and the hypothetical plane asthe planar leveling surface of the protruding tips. In the embodiment 1,the protruding tips of the plurality of abrasive particles have a planarleveling surface, wherein the difference in protrusion distance betweenthe highest protruding tip and the 2^(nd) highest protruding tip of thefirst layer of abrasive particles is less than or equal to about 20microns, the difference in protrusion distance between the highestprotruding tip and the 10^(th) highest protruding tip of the first layerof abrasive particles is less than or equal to about 20 microns, thedifference in protrusion distance between the highest protruding tip andthe 100^(th) highest protruding tip of the first layer of abrasiveparticles is less than or equal to about 40 microns, and the differencein protrusion distance between the highest 1% of the protruding tips ofthe first layer of abrasive particles is less than or equal to about 80microns.

In the above-mentioned context, the chemical mechanical polishingconditioner disclosed by the comparative example 1 is by theconventional manufacturing manner, which disposes abrasive particles anda bonding layer is in advance disposed on a substrate in advance and thecarries out on heating, so that the abrasive particles is fixed on thesubstrate by a brazing reaction of the bonding layer. However, becauseof the difference of the thermal expansion coefficient between thebonding layer and the substrate, the chemical mechanical polishingconditioner will be distorted in the cooling process after hardening thechemical mechanical polishing conditioner, and thus the bonding layerand the abrasive particles of the surface of the substrate will bedistorted. Accordingly, the height of the bonding layer and the abrasiveparticles in the central region of the chemical mechanical polishingconditioner is higher than the height of the bonding layer and theabrasive particles in the outside annular region of the chemicalmechanical polishing conditioner, so as to form a distorted surface inwhich the height of the outside region is higher than the height of thecentral region. Therefore, the leveling of the chemical mechanicalpolishing conditioner is damaged to increase damage ratio of polishedworkpieces, and thus the polishing efficiency and the working life ofthe chemical mechanical polishing conditioner become to decrease. It isdifferent to the manufacturing manner and the configuration of theconventional chemical mechanical polishing conditioner, in theembodiment 1 of the present invention, a plurality of abrasive particlesare bonded to and fixed on a substrate in advance so as to form anabrasive layer, and then the abrasive layer is disposed on the substrateand the bonding layer and carried out on heating, so that the abrasivelayer is fixed on the substrate by a brazing reaction of the bondinglayer. Therefore, the chemical mechanical polishing conditioner of thepresent invention can avoid a problem that is easily resulted to distortand drift in a cooling process after a hardening process or in ahardening process. On the other hand, the chemical mechanical polishingconditioner of the present invention can further have a planar levelingsurface by controlling the protruding distance of protruding tips of theplurality of abrasive particles, or the chemical mechanical polishingconditioner of the present invention can form to distribute thedistorted forces equally on both sides of the thin metal sheet by theplurality of abrasive particles that have the same configuration anddistribution to dispose on both side of the thin metal sheetrespectively, so as to offset effectively the distorted degree resultedfrom cooling the abrasive layer after brazing.

Embodiment 2

FIGS. 3A-3D shows a process of manufacturing a chemical mechanicalpolishing conditioner according to the embodiment 2 of the presentinvention, wherein an abrasive layer of the embodiment 2 has a layer ofabrasive particles on one side of an abrasive layer of the embodiment 2,which is different from the abrasive layer of which both side have thelayer of abrasive particles. Please refer to FIG. 3A, firstly, anabrasive layer 32 is provided and has a first layer of abrasiveparticles 321, a thin metal sheet 322. Wherein the first layer ofabrasive particles 321 is located above the thin metal sheet 322; thefirst layer of abrasive particles 321 of the abrasive layer 32 comprisesa plurality of abrasive particles, the protruding tips of the pluralityof abrasive particles may be regarded as a planar leveling surface, andthe plurality of abrasive particles have a patterning arrangement beingan array pattern; and the protruding tips of the plurality of abrasiveparticles are all oriented upward so as to form a tip-grinding surfacehaving an orientation. Furthermore, the plurality of abrasive particlesof the first layer 321 of abrasive particles have a monolayerarrangement, the plurality of abrasive particles of the first layer ofabrasive particles 321 are synthetic diamond having a particle size 500microns, and the thin metal sheet 322 is selected flexible and thinsheet so as to easily attach the abrasive layer with the substrate andfix the plurality of abrasive particle, for example copper metal sheet,thin plastic sheet, or thin braze alloy sheet.

Next, as shown in FIG. 3B, the plurality of abrasive particles of thefirst layer of abrasive particles 321 are embedded and fixed in onesides of the thin metal sheet 322 by heating and pressuring means.Finally, as shown FIGS. 3C-3D, a substrate 30 made of stainless steelmaterials and a bonding layer 31 made of nickel-based braze materialsare provided, wherein the bonding layer 31 is located above thesubstrate 30, then the abrasive layer 32 is disposed on the bondinglayer 31 and carried on with heat-brazing, and thus the abrasive layer32 can bond to and fixed on the substrate 30 by the bonding layer 31, soas to form the chemical mechanical polishing conditioner having theplanar leveling surface.

Accordingly, the chemical mechanical polishing conditioner of theembodiment 2 of the present invention comprises: a substrate 30; abonding layer 31, disposed on the substrate 30; and an abrasive layer32, having a thin metal sheet 322 and a first layer of abrasiveparticles 321, wherein the first layer of abrasive particles 321 isdisposed on the thin metal sheet 322, and the abrasive layer 32 iscoupled to the substrate 30 with the bonding layer 31; wherein the firstlayer of abrasive particles 321 comprises a plurality of abrasiveparticles, of which protruding tips have a planar leveling surface, sothat the plurality of abrasive particles do not have one or moreprotruding tips of the plurality of abrasive particles having particularsignificant difference in protrusion distance, and the plurality ofabrasive particles have a patterning arrangement, and the plurality ofabrasive particles of the first layer 321 of abrasive particles have amonolayer arrangement.

Furthermore, In the above-mentioned chemical mechanical polishingconditioner, the protruding tips of the plurality of abrasive particleshave a planar leveling surface, wherein the difference in protrusiondistance between the highest protruding tip and the 2^(nd) highestprotruding tip of the first layer of abrasive particles is less than orequal to about 20 microns, the difference in protrusion distance betweenthe highest protruding tip and the 10^(th) highest protruding tip of thefirst layer of abrasive particles is less than or equal to about 20microns, the difference in protrusion distance between the highestprotruding tip and the 100^(th) highest protruding tip of the firstlayer of abrasive particles is less than or equal to about 40 microns,and the difference in protrusion distance between the highest 1% of theprotruding tips of the first layer of abrasive particles is less than orequal to about 80 microns.

It is different to the manufacturing manner and the configuration of theconventional chemical mechanical polishing conditioner, in theembodiment 2 of the present invention, a plurality of abrasive particlesare bonded to and fixed on a substrate in advance so as to form anabrasive layer, and then the abrasive layer is disposed on the substrateand the bonding layer and carried out on heating, so that the abrasivelayer is fixed on the substrate by a brazing reaction of the bondinglayer. Therefore, the chemical mechanical polishing conditioner of thepresent invention can avoid a problem that is easily resulted to distortand drift in a cooling process after a hardening process or in ahardening process. On the other hand, the chemical mechanical polishingconditioner of the present invention can further have a planar levelingsurface by controlling the protruding distance of protruding tips of theplurality of abrasive particles, so as to decrease to damage ratio ofpolished workpieces, and thus the chemical mechanical polishingconditioner has more excellent polishing efficiency and working life.

Embodiment 3

FIGS. 4A-4B shows schematic views of a chemical mechanical polishingconditioner according to the embodiment 3 of the present invention. Thechemical mechanical polishing conditioner according to the presentembodiment 3 is almost the same as that of the embodiment 1, except thatan abrasive layer of the embodiment 3 makes abrasive particles to befixed on both side of a thin metal sheet by bonding layers of abrasiveparticles, on the contrary, the abrasive layer of the embodiment 1 makeabrasive particles to be directly embedded to and fixed on the both sideof the thin metal sheet. Please refer to FIG. 4A, an abrasive layer 42is provided and has a first layer of abrasive particles 421 a, a thinmetal sheet 422, a bonding layer of abrasive particles 423, and a secondlayer of abrasive particles 421 b. Wherein the first layer of abrasiveparticles 421 a is located above the thin metal sheet 422, the secondlayer of abrasive particles 422 b is located under the thin metal sheet422, and thus the thin metal sheet 422 is sandwiched between the firstlayer of abrasive particles 421 a and the second layer of abrasiveparticles 421 b. Furthermore, the first layer of abrasive particles 421a and the second layer of abrasive particles 421 b can be respectivelyfixed on both side of the thin metal sheet 422 by brazing bonding layersof abrasive particles 423 made of Cu—Sn—Ti braze alloy materials. Next,as shown in FIG. 4B, a substrate 40 made of stainless steel materialsand a bonding layer 41 made of Cu—Sn—Ti braze alloy materials areprovided, wherein the bonding layer 41 is located above the substrate40, then the abrasive layer 42 is disposed on the bonding layer 41 andcarried on with heat-brazing, and thus the abrasive layer 42 can bond toand fixed on the substrate 40 by the bonding layer 41, so as to form thechemical mechanical polishing conditioner having the planar levelingsurface.

Embodiment 4

FIGS. 5A-5B shows schematic views of a chemical mechanical polishingconditioner according to the embodiment 4 of the present invention. Thechemical mechanical polishing conditioner according to the presentembodiment 4 is almost the same as that of the embodiment 2, except thatan abrasive layer of the embodiment 4 makes abrasive particles to befixed on one side of a thin metal sheet by a bonding layer of abrasiveparticles, on the contrary, the abrasive layer of the embodiment 2 makesabrasive particles to be directly embedded to and fixed on the one sideof the thin metal sheet. Please refer to FIG. 5A, an abrasive layer 52is provided and has a first layer of abrasive particles 521, a thinmetal sheet 522 and a bonding layer of abrasive particles 523, whereinthe first layer of abrasive particles 521 is located above the thinmetal sheet 522, and the first layer of abrasive particles 521 can befixed on one side of the thin metal sheet 522 by brazing bonding layersof abrasive particles 523 made of nickel-based braze alloy materials.Next, as shown in FIG. 5B, a substrate 50 made of stainless steelmaterials and a bonding layer 51 made of nickel-based braze materialsare provided, wherein the bonding layer 51 is located above thesubstrate 50, then the abrasive layer 52 is disposed on the bondinglayer 51 and carried on with heat-brazing, and thus the abrasive layer52 can bond to and fixed on the substrate 50 by the bonding layer 51, soas to form the chemical mechanical polishing conditioner having theplanar leveling surface.

Embodiment 5

FIG. 6 shows a schematic view of a chemical mechanical polishingconditioner according to the embodiment 5 of the present invention. Thechemical mechanical polishing conditioner according to the presentembodiment 5 is almost the same as that of the embodiment 1, except thatprotruding planes of a plurality of abrasive particles of the embodiment5 are all oriented upward so as to form a tip-grinding surface having anorientation, on the contrary, the protruding tip of the plurality ofabrasive particles of the embodiment 1 are all oriented upward so as toform a tip-grinding surface having an orientation. Please refer to FIG.6, an abrasive layer 62 is provided and has a first layer of abrasiveparticles 621 a, a thin metal sheet 622, and a second layer of abrasiveparticles 621 b. Wherein the first layer of abrasive particles 621 a islocated above the thin metal sheet 622, the second layer of abrasiveparticles 621 b is located under the thin metal sheet 622, and thus thethin metal sheet 622 is sandwiched between the first layer of abrasiveparticles 621 a and the second layer of abrasive particles 621 b; theplurality of abrasive particles of the first layer of abrasive particles621 a and the second layer of abrasive particles 621 b are embedded andfixed in both sides of the thin metal sheet 622 by heating andpressuring means; and protruding planes of the plurality of abrasiveparticles are all oriented upward so as to form a plane-grinding surfacehaving an orientation. Next, a substrate 60 made of stainless steelmaterials and a bonding layer 61 made of Cu—Sn—Ti braze alloy materialsare provided, wherein the bonding layer 61 is located above thesubstrate 60, then the abrasive layer 62 is disposed on the bondinglayer 61 and carried on with heat-brazing, and thus the abrasive layer62 can bond to and fixed on the substrate 60 by the bonding layer 61, soas to form the chemical mechanical polishing conditioner having theplanar leveling surface.

Embodiment 6

FIG. 7 shows a schematic view of a chemical mechanical polishingconditioner according to the embodiment 6 of the present invention. Thechemical mechanical polishing conditioner according to the presentembodiment 6 is almost the same as that of the embodiment 1, except thatprotruding incline planes of a plurality of abrasive particles of theembodiment 6 are all oriented upward so as to form a ridge-grindingsurface having an orientation, on the contrary, the protruding tip ofthe plurality of abrasive particles of the embodiment 1 are all orientedupward so as to form a tip-grinding surface having an orientation.Please refer to FIG. 7, an abrasive layer 72 is provided and has a firstlayer of abrasive particles 721 a, a thin metal sheet 722, and a secondlayer of abrasive particles 721 b. Wherein the first layer of abrasiveparticles 721 a is located above the thin metal sheet 722, the secondlayer of abrasive particles 721 b is located under the thin metal sheet722, and thus the thin metal sheet 722 is sandwiched between the firstlayer of abrasive particles 721 a and the second layer of abrasiveparticles 721 b; the plurality of abrasive particles of the first layerof abrasive particles 721 a and the second layer of abrasive particles721 b are embedded and fixed in both sides of the thin metal sheet 722by heating and pressuring means; and protruding incline planes of theplurality of abrasive particles are all oriented upward so as to form aridge-grinding surface having an orientation. Next, a substrate 70 madeof stainless steel materials and a bonding layer 71 made of Cu—Sn—Tibraze alloy materials are provided, wherein the bonding layer 71 islocated above the substrate 70, then the abrasive layer 72 is disposedon the bonding layer 71 and carried on with heat-brazing, and thus theabrasive layer 72 can bond to and fixed on the substrate 70 by thebonding layer 71, so as to form the chemical mechanical polishingconditioner having the planar leveling surface.

Embodiment 7

FIG. 8 shows a schematic view of a chemical mechanical polishingconditioner according to the embodiment 7 of the present invention. Thechemical mechanical polishing conditioner according to the presentembodiment 7 is almost the same as that of the embodiment 1, except thatsome protruding tips and some protruding planes of a plurality ofabrasive particles of the embodiment 7 are all oriented upward so as toform respectively a tip-grinding surface and a face-grinding surfacehaving an orientation, on the contrary, the protruding tip of theplurality of abrasive particles of the embodiment 1 are all orientedupward so as to form a tip-grinding surface having an orientation.Please refer to FIG. 8, an abrasive layer 82 is provided and has a firstlayer of abrasive particles 821 a, a thin metal sheet 822, and a secondlayer of abrasive particles 821 b. Wherein the first layer of abrasiveparticles 821 a is located above the thin metal sheet 822, the secondlayer of abrasive particles 821 b is located under the thin metal sheet822, and thus the thin metal sheet 822 is sandwiched between the firstlayer of abrasive particles 821 a and the second layer of abrasiveparticles 821 b; the plurality of abrasive particles of the first layerof abrasive particles 821 a and the second layer of abrasive particles821 b are embedded and fixed in both sides of the thin metal sheet 822by heating and pressuring means; wherein, protruding tips of theabrasive particles centrally located and protruding planes of theabrasive particles peripherally located are all oriented upward so as toform respectively a tip-grinding surface and a face-grinding surfacehaving an orientation. Next, a substrate 80 made of stainless steelmaterials and a bonding layer 81 made of Cu—Sn—Ti braze alloy materialsare provided, wherein the bonding layer 81 is located above thesubstrate 80, then the abrasive layer 82 is disposed on the bondinglayer 81 and carried on with heat-brazing, and thus the abrasive layer82 can bond to and fixed on the substrate 80 by the bonding layer 81, soas to form the chemical mechanical polishing conditioner having theplanar leveling surface.

The embodiments described above are only to exemplify the presentinvention but not to limit the scope of the present invention. Anyequivalent modification or variation according to the spirit of thepresent invention is to be also included within the scope of the presentinvention.

1. A chemical mechanical polishing conditioner, which comprises: asubstrate; a bonding layer, disposed on the substrate; and an abrasivelayer, having a thin metal sheet and a first layer of abrasiveparticles, wherein the first layer of abrasive particles is disposed onthe thin metal sheet, and the abrasive layer is coupled to the substratewith the bonding layer; wherein the first layer of abrasive particlescomprises a plurality of abrasive particles, of which protruding tipshave a planar leveling surface, so that the plurality of abrasiveparticles do not have one or more protruding tips of the plurality ofabrasive particles having particular significant difference inprotrusion distance, and the plurality of abrasive particles have apatterning arrangement.
 2. The chemical mechanical polishing conditioneras claimed in claim 1, further comprising a second layer of abrasiveparticles, wherein the second layer of abrasive particles is disposedunder the thin metal sheet and is sandwiched between the thin metalsheet and the bonding layer.
 3. The chemical mechanical polishingconditioner as claimed in claim 1, wherein the plurality of abrasiveparticles of the first layer of abrasive particles have a monolayerarrangement.
 4. The chemical mechanical polishing conditioner as claimedin claim 1, wherein the first layer of abrasive particles and the secondlayer of abrasive particles have the same configuration and distributionof abrasive particles.
 5. The chemical mechanical polishing conditioneras claimed in claim 1, wherein the plurality of abrasive particles arecoupled to the thin metal sheet with the bonding layer of abrasiveparticles.
 6. The chemical mechanical polishing conditioner as claimedin claim 1, wherein the difference in protrusion distance between thehighest protruding tip and the 2^(nd) highest protruding tip of thefirst layer of abrasive particles is less than or equal to about 20microns.
 7. The chemical mechanical polishing conditioner as claimed inclaim 6, wherein the difference in protrusion distance between thehighest protruding tip and the 2^(nd) highest protruding tip of thefirst layer of abrasive particles is less than or equal to about 10microns.
 8. The chemical mechanical polishing conditioner as claimed inclaim 1, wherein the difference in protrusion distance between thehighest protruding tip and the 10^(th) highest protruding tip of thefirst layer of abrasive particles is less than or equal to about 20microns.
 9. The chemical mechanical polishing conditioner as claimed inclaim 1, wherein the difference in protrusion distance between thehighest protruding tip and the 100^(th) highest protruding tip of thefirst layer of abrasive particles is less than or equal to about 40microns.
 10. The chemical mechanical polishing conditioner as claimed inclaim 1, wherein the difference in protrusion distance between thehighest 1% of the protruding tips of the first layer of abrasiveparticles is less than or equal to about 80 microns.
 11. The chemicalmechanical polishing conditioner as claimed in claim 1, wherein theplanar leveling surface is made by a hypothetical plane as a level, sothat the planar leveling surface is formed the protruding tips of theplurality of abrasive particles relative to the hypothetical plane. 12.The chemical mechanical polishing conditioner as claimed in claim 11,wherein the planar leveling surface is configured of the protruding tipsof the discontinuous abrasive particles extrapolated by FRT measurement.13. The chemical mechanical polishing conditioner as claimed in claim12, wherein the number of the protruding tips of the plurality ofabrasive particles are from 1000 to 30,000 or more.
 14. The chemicalmechanical polishing conditioner as claimed in claim 13, wherein thenumber of the protruding tips of the plurality of abrasive particles is1000.
 15. The chemical mechanical polishing conditioner as claimed inclaim 1, wherein, after the chemical mechanical polishing conditioner isused, the chemical mechanical polishing conditioner has 300 or moreabrasive particles producing wear and tear during the scaling value of50 multiplying power.
 16. The chemical mechanical polishing conditioneras claimed in claim 1, wherein the patterning arrangement is an arraypattern, a annular ring pattern, a concentric annular ring pattern, or aspiral ring pattern.
 17. The chemical mechanical polishing conditioneras claimed in claim 1, wherein the plurality of abrasive particles areoriented in a specific attitude, and the plurality of abrasive particlesis formed a tip-grinding surface, a plane-grinding surface, aridge-grinding surface or a combination thereof.
 18. The chemicalmechanical polishing conditioner as claimed in claim 1, wherein theplurality of abrasive particles are synthetic diamond, natural diamond,Poly-crystalline diamond, CBN (cubic Boron Nitride), or PCBN(Poly-crystalline cubic Boron Nitride).
 19. The chemical mechanicalpolishing conditioner as claimed in claim 1, the particle size of theplurality of abrasive particles is from 100 microns to 600 microns. 20.The chemical mechanical polishing conditioner as claimed in claim 1,wherein the bonding layer or the bonding layer of abrasive particles isa solder layer, a plating layer, a sinter layer, or a resin layer. 21.The chemical mechanical polishing conditioner as claimed in claim 20,wherein the bonding layer or the bonding layer of abrasive particles isa solder layer.
 22. The chemical mechanical polishing conditioner asclaimed in claim 21, wherein the solder layer is at least one selectedfrom the group consisting of copper (Cu), ferrous (Fe), stannum (Sn),cobalt (Co), nickel (Ni), chromium (Cr), manganese (Mn), silicon (Si),aluminum (Al), titanium (Ti), boron (B), phosphorus (P), or combinationsthereof.
 23. The chemical mechanical polishing conditioner as claimed inclaim 1, wherein the substrate is a stainless steel layer.
 24. Thechemical mechanical polishing conditioner as claimed in claim 1, furthercomprising a protective layer disposed on the surface of the abrasivelayer.
 25. The chemical mechanical polishing conditioner as claimed inclaim 24, wherein the protective layer is a Ni-metal layer, a Pd-metallayer, a DLC layer, or a layer of diamond thin film.